Next-Gen FETs Course: MOSFET to 2D Materials | Prof. Sudeb Dasgupta IIT Roorkee
Course Details
| Exam Registration | 547 |
|---|---|
| Course Status | Ongoing |
| Course Type | Elective |
| Language | English |
| Duration | 12 weeks |
| Categories | Electrical, Electronics and Communications Engineering, VLSI design |
| Credit Points | 3 |
| Level | Undergraduate/Postgraduate |
| Start Date | 19 Jan 2026 |
| End Date | 10 Apr 2026 |
| Enrollment Ends | 02 Feb 2026 |
| Exam Registration Ends | 20 Feb 2026 |
| Exam Date | 19 Apr 2026 IST |
| NCrF Level | 4.5 — 8.0 |
Semiconductor Devices for Next Generation Field Effect Transistors (More than Moore): A Physics Perspective
The relentless march of Moore's Law is facing fundamental physical limits. As traditional silicon scaling becomes increasingly challenging, the semiconductor industry is pivoting towards the "More than Moore" paradigm, focusing on novel materials, device architectures, and functionalities. At the forefront of this revolution are Next-Generation Field-Effect Transistors (FETs).
This comprehensive 12-week course, instructed by Prof. Sudeb Dasgupta of IIT Roorkee, offers a deep dive into the physics, design, and application of these cutting-edge devices. Designed for aspiring VLSI professionals and academics, it provides the foundational knowledge required to navigate the future of semiconductor technology.
Course Instructor: Learn from an Industry-Academia Expert
Prof. Sudeb Dasgupta brings over 23 years of teaching and research experience in Microelectronics and VLSI. As a professor in the Department of Electronics and Communication Engineering at IIT Roorkee, his expertise spans device modelling, device-circuit co-design, radiation-hardened technologies, and compute-in-memory architectures. With more than 250 publications and 17 graduated research scholars, his guidance is rooted in both deep academic knowledge and practical industry relevance.
Who Should Enroll?
This course is meticulously designed for a diverse audience aiming to build or advance a career in the semiconductor sector.
- Undergraduate Students (Final Year Elective)
- Postgraduate Students (M.Tech, M.S.)
- PhD Scholars in devices, circuits, or VLSI
- VLSI Industry Professionals seeking to update their knowledge on beyond-CMOS technologies.
Prerequisites & Industry Support
Prerequisites: A fundamental understanding of Basic Electronic Devices and Semiconductor Physics is recommended to fully grasp the advanced concepts.
Industry Support: The curriculum is highly relevant to major players in the semiconductor ecosystem, including TCAD/EDA companies (Cadence, Synopsys) and leading semiconductor manufacturers like NXP, Qualcomm, GlobalFoundries, Texas Instruments, NVIDIA, and Intel.
Detailed 12-Week Course Curriculum
The course is structured to take you from foundational concepts to the frontiers of semiconductor research.
| Week | Core Topic | Key Learning Points |
|---|---|---|
| 1 | MOS Capacitors | Energy band diagrams, C-V characteristics, second-order effects. |
| 2 | MOSFET and Application | I-V/C-V characteristics, high/low-frequency modeling, switch/amplifier applications. |
| 3 | MOSFET SPICE Models | Introduction to SPICE models, equations, and practical simulation techniques. |
| 4 | Semiconductor Heterostructures | Carrier transport, band diagrams, PN heterojunction diodes. |
| 5 | Short Channel Effects | GIDL, DIBL, Subthreshold Swing, mobility, velocity saturation, hot carrier effects. |
| 6 | Double Gate MOSFET | SOI MOSFETs, partially/fully depleted devices, introduction to Junctionless MOSFET. |
| 7 | FinFET: A successor of MOSFET | FinFET structure, RLC modeling, high-frequency modeling, device-circuit co-design. |
| 8 | Gate-All-Around FETs | GAA structures, Nanosheet FETs, process variations, analog perspective. |
| 9 | Forksheet FET and CFET | Sub-3nm node devices, design challenges, industry adoption, optimization for scaling. |
| 10 | Negative Capacitance FETs | NC concept, FeFETs, advantages/challenges, modeling, Phase Transition Materials. |
| 11 | III-V Semiconductor FETs | Materials for high-speed devices, HEMT modeling, III-V FETs and applications. |
| 12 | 2D Materials for Next-Gen Computing | Physics of 2D materials (e.g., Graphene, TMDCs), challenges, applications, 2D-FETs. |
Key Learning Outcomes
By completing this course, you will gain:
- A solid understanding of the evolution from planar MOSFETs to 3D multi-gate architectures (FinFET, GAA).
- Insight into the physics of scaling limitations and the solutions offered by novel devices like CFETs and Negative Capacitance FETs.
- Knowledge of alternative semiconductor materials, including III-V compounds and two-dimensional (2D) materials like graphene and transition metal dichalcogenides (TMDCs).
- The ability to model and understand the trade-offs in advanced FET designs for digital and analog applications.
- A perspective on the future roadmap of semiconductor technology for next-generation computing.
Essential Reference Books
- Neamen, Donald A. Semiconductor Physics and Devices: Basic Principles. McGraw-Hill, 2012.
- Pierret, R. F. Semiconductor Device Fundamentals. 1996.
- Colinge, Jean-Pierre. FinFETs and Other Multi-Gate Transistors. 2008.
This course is your gateway to mastering the devices that will power the next generation of electronics, from high-performance computing and AI accelerators to ultra-low-power IoT and biomedical systems. Embrace the "More than Moore" era with a strong foundation in the physics of next-generation Field-Effect Transistors.
For more details on the instructor and course, visit: https://ece.iitr.ac.in/sudeb-dasgupta/
Enroll Now →