Course Details

Exam Registration185
Course StatusOngoing
Course TypeElective
LanguageEnglish
Duration12 weeks
CategoriesElectrical, Electronics and Communications Engineering, VLSI design
Credit Points3
LevelUndergraduate/Postgraduate
Start Date19 Jan 2026
End Date10 Apr 2026
Enrollment Ends02 Feb 2026
Exam Registration Ends20 Feb 2026
Exam Date24 Apr 2026 IST
NCrF Level4.5 — 8.0

Master the Physics and Simulation of Modern Semiconductor Devices

The relentless march of Moore's Law and the advent of nanoscale, heterostructure devices have made semiconductor device modeling and simulation not just an academic exercise, but a critical pillar of modern electronics design. For engineers and researchers, the ability to predict device behavior before fabrication is indispensable. A new, comprehensive course offered by the Indian Institute of Technology Kharagpur (IIT KGP) provides a deep dive into this essential field.

Course Overview: Building a Foundation for Device Design

This 12-week foundation-level course is meticulously structured to develop a sound physical and intuitive understanding of semiconductor devices. The objective is to empower students and professionals with the knowledge to make key decisions when designing application-specific devices. The curriculum is divided into three broad pillars: the fundamental properties of semiconductors, the operational principles of key devices, and the governing equations with their boundary conditions that enable accurate simulation.

Level: Undergraduate/Postgraduate
Duration: 12 Weeks
Primary Categories: Electrical Engineering, Electronics and Communication Engineering, VLSI Design

Learn from an Expert: Instructor Profile

The course is led by Prof. Vivek Dixit, an Assistant Professor in the Department of Electronics and Electrical Communication Engineering at IIT Kharagpur. Prof. Dixit brings a wealth of academic and industry experience to the classroom.

He received his B.Tech. in Electrical Engineering from IIT Delhi and his Ph.D. from the National University of Singapore. His research expertise spans III-V semiconductors for optoelectronics, silicon photonics-based optical modulators (where he invented a simulation technique for EYE diagrams), metamaterials, and semiconductor devices. His professional journey includes roles at prestigious organizations like nVIDIA, the Institute of High-Performance Computing in Singapore, and IIT Jodhpur, ensuring the course content is both theoretically rigorous and practically relevant.

Who Should Enroll and Industry Relevance

Intended Audience: This course is ideally suited for BTech, MSc, and MTech students specializing in Electrical Engineering (EE) or Electronics and Communication Engineering (ECE).

Industry Support: The skills taught in this course are directly applicable in leading semiconductor companies worldwide. Professionals and aspiring engineers targeting roles at industry giants like Intel, nVIDIA, AMD, Samsung, ST Microelectronics, Texas Instruments, Analog Devices, and NXP Semiconductors will find this knowledge invaluable for careers in device design, TCAD (Technology Computer-Aided Design), and research & development.

Detailed 12-Week Course Layout

The course progresses from fundamental concepts to advanced simulation techniques, culminating in practical examples with commercial tools.

WeekTopics Covered
Week 1-3Introduction to nanoelectronics, crystal structures, band theory, doping, carrier statistics, and concentration calculations.
Week 4-5Detailed analysis of p-n junction diodes (I-V, non-idealities) and Bipolar Junction Transistors (BJTs) including Ebers-Moll and Gummel-Poon models, and metal-semiconductor contacts.
Week 6Exploration of Field Effect Transistors (FETs): JFET, MESFET, HEMT, and a deep dive into MOSFET physics (band diagrams, C-V, I-V, CMOS).
Week 7Introduction to Semiclassical Transport Theory: Boltzmann Transport Equation (BTE) and Relaxation-Time Approximation (RTA).
Week 8-9Core Drift-Diffusion (DD) Model: Derivation, numerical methods (Finite Difference, Scharfetter-Gummel), boundary conditions, and solution techniques (Gummel’s Iteration, Newton’s Method).
Week 10Hydrodynamic Modeling as an extension of the DD model, introducing energy and momentum balance equations.
Week 11Quantum Transport Models: Tunneling, Schrödinger equation, and quantum mechanical corrections for nanoscale devices.
Week 12Practical Application: Examples using commercial device simulation tools, implementing DD/Hydrodynamic models, and analyzing mobility & generation-recombination models.

Essential Reference Materials

The course is supported by seminal textbooks in the field, ensuring a strong theoretical backbone:

  • Streetman & Banerjee: "Solid State Electronic Devices" – For foundational device physics.
  • Sze & Kwok: "Physics of Semiconductor Devices" – The definitive reference for in-depth device operation.
  • Vasileska, Goodnick & Klimeck: "Computational Electronics" – Focused on modeling and simulation techniques.
  • Selberherr: "Analysis and Simulation of Semiconductor Devices" – A classic on numerical methods for device simulation.

Conclusion: Why This Course Matters

In an era defined by increasingly complex and scaled semiconductor technologies, moving beyond black-box understanding to a first-principles grasp of device physics is crucial. This IIT Kharagpur course, under the guidance of Prof. Vivek Dixit, offers a unique opportunity to build that expertise. From the basic p-n junction to advanced quantum transport models, learners will gain the comprehensive knowledge and simulation skills needed to innovate at the forefront of electronics design and contribute meaningfully to the global semiconductor industry.

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